tsc4505 high voltage npn transistor 1/4 version: b11 sot - 23 product summary bv ceo 400v bv cbo 400v i c 300ma v ce(sat) 0.1v @ i c / i b = 10ma / 1ma features low v ce(sat) 0.15v @ i c / i b = 10ma / 10ma (typ.) complementary part with tsa1759 ordering information part no. package packing tsc4505cx rf sot-23 3kpcs / 7 reel tsc4505cx rfg sot-23 3kpcs / 7 reel note: g denotes halogen free product. structure epitaxial planar type npn silicon transistor absolute maximum rating (t a = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 6 v collector current i c 300 ma collector power dissipation sot-23 p d 0.225 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c note: single pulse, pw=20ms, duty 50% electrical specifications (t a = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit collector-base breakdown voltage i c = 50ua, i e = 0 bv cbo 400 -- -- v collector-emitter breakdown voltage i c = 1ma, i b = 0 bv ceo 400 -- -- v emitter-base breakdown voltage i e = 50ua, i c = 0 bv ebo 6 -- -- v collector cutoff current v cb = 400v, i e = 0 i cbo -- -- 10 ua collector-emitter reverse current v c e = 300v, r e b = 4k i cer -- -- 20 na emitter cutoff current v eb = 6v, i c = 0 i ebo -- -- 10 ua collector-emitter saturation voltage i c / i b = 10ma / 1ma v ce(sat) -- 0.1 0.5 v base-emitter saturation voltage i c / i b = 10ma / 1ma v be(sat) -- -- 1.5 v dc current transfer ratio v ce = 10v, i c = 10ma h fe 100 -- 270 transition frequency v ce =10v, i c =-10ma, f=10mhz f t -- 20 -- mhz output capacitance v cb = 10v, i e = 0, f=1mhz cob -- 7 -- pf pin definition : 1. base 2. emitter 3. collector
tsc4505 high voltage npn transistor 2/4 version: b11 electrical characteristics curve (t a = 25 o c, unless otherwise noted) figure 1. dc current gain figure 2. v ce(sat) v.s. ic figure 3. v be(sat) v.s. ic figure 4. power derating curve
tsc4505 high voltage npn transistor 3/4 version: b11 sot-23 mechanical drawing sot-23 dimension dim millimeters inches min max min max. a 1.00 bsc 0.039 bsc a1 2.00 bsc 0.079 bsc b 2.10 2.75 0.083 0.108 c 1.20 1.60 0.047 0.063 d 2.80 3.04 0.110 0.120 e 0.89 1.30 0.035 0.051 f 0.01 0.10 0.000 0.004 g 0.30 0.50 0.012 0.020 h 0.08 0.18 0.003 0.007 i 0.30 0.60 0.012 0.024
tsc4505 high voltage npn transistor 4/4 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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